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NTJD4105C
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
N/P
Test Condition
Min
Typ
Max
Units
OFF CHARACTERISTICS
Drain ? to ? Source
Breakdown Voltage
V (BR)DSS
N
P
V GS = 0 V
I D = 250 m A
I D = ? 250 m A
20
? 8.0
27
? 10.5
V
Drain ? to ? Source Breakdown
Voltage Temperature Coeffi-
cient
V (BR)DSS
/ T J
N
P
22
? 6.0
mV/ ° C
Zero Gate Voltage Drain Cur-
rent
Gate ? to ? Source
Leakage Current
I DSS
I GSS
N
P
N
P
V GS = 0 V, V DS = 16 V
V GS = 0 V, V DS = ? 6.4 V
V DS = 0 V
T J = 25 ° C
V GS = ± 12 V
V GS = ± 8.0
1.0
1.0
10
10
m A
m A
ON CHARACTERISTICS (Note 2 )
Gate Threshold Voltage
V GS(TH)
N
P
V GS = V DS
I D = 250 m A
I D = ? 250 m A
0.6
? 0.45
0.92
? 0.83
1.5
? 1.0
V
Gate Threshold
Temperature Coefficient
V GS(TH) /
T J
N
P
? 2.1
2.2
? mV/ ° C
Drain ? to ? Source On Resist-
ance
R DS(on)
N
P
V GS = 4.5 V I D = 0.63 A
V GS = ? 4.5 V, I D = ? 0.57 A
0.29
0.22
0.375
0.30
W
N
P
P
V GS = 2.5 V, I D = 0.40 A
V GS = ? 2.5 V, I D = ? 0.48 A
V GS = ? 1.8 V, I D = ? 0.20 A
0.36
0.32
0.51
0.445
0.46
0.90
Forward Transconductance
g FS
N
V DS = 4.0 V I D = 0.63 A
2.0
S
CHARGES AND CAPACITANCE S
P
V DS = ? 4.0 V, I D = ? 0.57 A
2.0
Input Capacitance
C ISS
N
V DS = 20 V
33
46
pF
P
V DS = ? 8.0V
160
225
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
N
P
N
f = 1 MHz, V GS = 0 V
V DS = 20 V
V DS = ? 8.0 V
V DS = 20 V
13
38
2.8
22
55
5.0
P
V DS = ? 8.0 V
28
40
Total Gate Charge
Q G(TOT)
N
V GS = 4.5 V, V DS = 10 V, I D = 0.7 A
1.3
3.0
nC
P
V GS = ? 4.5 V, V DS = ? 5.0 V, I D = ? 0.6 A
2.2
4.0
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TH)
Q GS
Q GD
N
P
N
P
N
P
V GS = 4.5 V, V DS = 10 V, I D = 0.7 A
V GS = ? 4.5 V, V DS = ? 5.0 V, I D = ? 0.6 A
V GS = 4.5 V, V DS = 10 V, I D = 0.7 A
V GS = ? 4.5 V, V DS = ? 5.0 V, I D = ? 0.6 A
V GS = 4.5 V, V DS = 10 V, I D = 0.7 A
V GS = ? 4.5 V, V DS = ? 5.0 V, I D = ? 0.6 A
0.1
0.1
0.2
0.5
0.4
0.5
SWITCHING CHARACTERISTIC S (Note 3)
Turn ? On Delay Time
Rise Time
Turn ? Off Delay Time
Fall Time
t d(ON)
t r
t d(OFF)
t f
N
V GS = 4.5 V, V DD = 10 V,
I D = 0.5 A, R G = 20 W
0.083
0.227
0.786
0.506
m s
Turn ? On Delay Time
Rise Time
Turn ? Off Delay Time
Fall Time
t d(ON)
t r
t d(OFF)
t f
P
V GS = ? 4.5 V, V DD = ? 4.0 V,
I D = ? 0.5 A, R G = 8.0 W
0.013
0.023
0.050
0.036
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
N
P
V GS = 0 V, T J = 25 ° C
I S = 0.23 A
I S = ? 0.23 A
0.76
0.76
1.1
1.1
V
N
P
V GS = 0 V, T J = 125 ° C
I S = 0.23 A
I S = ? 0.23 A
0.63
0.63
Reverse Recovery Time
t RR
N
P
V GS = 0 V,
d IS /d t = 90 A/ m s
I S = 0.23 A
I S = ? 0.23 A
0.410
0.078
m s
2. Pulse Test: pulse width ≤ 300 m s, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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